2N4126 -0.2 a, -25 v pnp plastic encapsulated transistor elektronische bauelemente 29-dec-2010 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? a c e k f d b g h j rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? pnp silicon epitaxial transistor for switching and amplifier applications. ? complementary of the 2n4124 absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo -25 v collector to emitter voltage v ceo -25 v emitter to base voltage v ebo -4 v collector current - continuous i c -0.2 a collector power dissipation p c 625 mw thermal resistance junction to ambient r ja 200 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo -25 - - v i c = -0.01ma, i e = 0a collector to emitter breakdown voltage v (br)ceo -25 - - v i c =-1ma, i b = 0a emitter to base br eakdown voltage v (br)ebo -4 - - v i e = -0.01ma, i c = 0a collector cut-off current i cbo - - -50 na v cb =- 20v, i e = 0 a emitter cut-off current i ebo - - -50 na v eb = -3v, i c = 0 ma dc current gain h fe (1) * 120 - 360 v ce = -1v, i c = -2 ma h fe (2) * 60 - - v ce = -1v, i c =-50ma collector to emitter saturation voltage v ce(sat) * - - -0.4 v i c =-50ma, i b =-5ma base to emitter sa turation voltage v be(sat) * - - -0.95 v i c =-50ma, i b =-5ma collector output capacitance c ob - - 4.5 pf v cb = -5v, i e = 0a, f=1mhz transition frequency f t 250 - - mhz v ce = -20v, i c = -10ma, f=100mhz * pulse test pulse width Q 300 ? s, duty cycle Q 1.5% . to-92 ref. millimeter min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76 ? emitte r ? base ? collector
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